SELF ALIGNED COMPACT BIPOLAR JUNCTION TRANSISTOR LAYOUT, AND METHOD OF MAKING SAME

摘要

The invention relates to a process of forming a bipolar junction transistor (BJT) that includes forming a topology over a substrate. Thereafter, a spacer is formed at the topology. A base layer is formed from epitaxial silicon above the spacer and at the topology. A leakage block structure is formed in the substrate by out-diffusion from the spacer. Thereafter a BJT is completed with the base layer and the spacer.