A METHOD FOR PRODUCING A MASK FOR HIGH RESOLUTION LITHOGRAPHY, A MASK OBTAINED THEREBY AND A MULTI-LAYER ELEMENT FOR HIGH RESOLUTION LITHOGRAPHY

摘要

A method is described for producing a mask for high definition lithography, which includes the steps of providing a substrate; depositing on this substrate a first layer of a polymeric material sensitive to exposure to charged particles; depositing on this first layer a second layer of a polymeric material sensitive to electromagnetic radiation; exposing the second layer to electromagnetic radiation according to a predetermined topography so as to define first and second portions of the second layer which have been exposed or not exposed respectively to the electromagnetic. radiation; removing either the first or the second portion of the second layer, and also the step of irradiating the first layer, partially covered by the first or second layer which was not removed, by means of a source of low energy charged particles. A mask is also described for high definition lithography, produced according to the method described above and a multi-layer element for high definition lithography which includes a first layer of a polymeric material sensitive to exposure to charged particles; a second layer of a polymeric material sensitive to electromagnetic radiation, in which the first and the second layer are Langmuir-Blodgett films.