发明名称 |
MEASUREMENT OF METAL ELECTROPLATING AND SEED LAYER THICKNESS AND PROFILE |
摘要 |
A method and system for measuring metal electroplating barrier and seed layer thickness and profile. Using optical metrology(210), profiles of post-barrier deposition grating and post-seed deposition grating(220) can be measured non-destructively. In turn, the thickness and profile of the barrier layer can be determined by subtracting the profile of the post-barrier deposition grating from the profile of the substrate damascene grating(240). Similarly, the thickness and profile of the seed layer can be determined by subtracting the profile of the post-seed deposition gratin from the profile of the post-barrier deposition grating.
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申请公布号 |
WO03050473(A1) |
申请公布日期 |
2003.06.19 |
申请号 |
WO2002US39987 |
申请日期 |
2002.12.13 |
申请人 |
TIMBRE TECHNOLOGIES, INC.;LANE, LAWRENCE;JAKATDAR, NICKHIL;NUI, XINHUI |
发明人 |
LANE, LAWRENCE;JAKATDAR, NICKHIL;NUI, XINHUI |
分类号 |
G01B11/06;(IPC1-7):G01B11/00;G01R31/26 |
主分类号 |
G01B11/06 |
代理机构 |
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