发明名称 METHOD FOR PRODUCING A PATTERN IN THE FUNCTIONAL LAYER OF AN ARTICLE
摘要 The invention can be used mainly for forming submicron (nanometric) structures of a relief in the functional layers of metallographic forms. The inventive method is carried out by multipass machining of the functional layer (1) of an article (2). Bisector slots oriented towards a removable allowance and having various angular orientations are cut where the parts of the contour of a boss (4) are coupled. Afterwards, the side faces (7 and 8) of a subpicture are formed. In one of process steps, the boss (4) is outlined along the perimeter thereof by forming a slot along the corresponding edge (9) of the boss (4), the depth of said slot being lesser than the prescribed height of the boss (4). The remaining allowance between the elements of the boss (4) is removed in such a way that the prescribed profile thereof is produced in two steps without causing damage to the part (11) of the faces (7,8) formed during the outlining. In a first step, the slot having a depth equal to the prescribed height is cut. In the second step, the remaining allowance is removed by successive cutting passes in the area which is limited by the slot produced at the first stage.
申请公布号 WO03049945(A1) 申请公布日期 2003.06.19
申请号 WO2001RU00533 申请日期 2001.12.10
申请人 ESTERZON, MIKHAIL ABRAMOVICH;SAKHAROVA, OLGA PETROVNA;ASHKINAZY, YAKOV MIKHAILOVICH;YAKUNIN, VALERY ALEKSANDROVICH;CHERPAKOV, BORIS ILIICH;PISAREV, SERGEI ALEKSANDROVICH;CHEGLAKOV, ANDREI VALERIEVICH 发明人 ESTERZON, MIKHAIL ABRAMOVICH;SAKHAROVA, OLGA PETROVNA;ASHKINAZY, YAKOV MIKHAILOVICH;YAKUNIN, VALERY ALEKSANDROVICH;CHERPAKOV, BORIS ILIICH;PISAREV, SERGEI ALEKSANDROVICH;CHEGLAKOV, ANDREI VALERIEVICH
分类号 B41C1/02;(IPC1-7):B41C1/00 主分类号 B41C1/02
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