发明名称 Heat-dissipating substrate, method for making the same, and semiconductor device including the same
摘要 A heat-dissipating substrate is made of a composite material comprising a first composition primarily composed of aluminum and a second composition primarily composed of silicon carbide and/or silicon The heat-dissipating substrate has a recess in one of its main faces. The main faces have fine unevenness, and the maximum amplitude of the fine unevenness in the depth direction of a main face is smaller than the maximum length in the depth direction of composite particles comprising the first composition and the second composition or particles of the second composition, the particles being exposed at the surface of the main face.
申请公布号 US2003113578(A1) 申请公布日期 2003.06.19
申请号 US20020229077 申请日期 2002.08.28
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 OMACHI MASAHIRO;FUKUI AKIRA
分类号 C22C32/00;C22C21/02;C23F1/36;H01L21/308;H01L23/373;(IPC1-7):H01L25/04 主分类号 C22C32/00
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