| 发明名称 |
Method and system for molecular charge storage field effect transistor |
| 摘要 |
A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
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| 申请公布号 |
US2003111670(A1) |
申请公布日期 |
2003.06.19 |
| 申请号 |
US20010017999 |
申请日期 |
2001.12.14 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
MISRA VEENA;BOCIAN DAVID F.;KUHR WERNER G.;LINDSEY JONATHAN S. |
| 分类号 |
H01L21/8247;G11C11/56;G11C13/02;H01L27/115;H01L27/28;H01L29/788;H01L29/792;H01L51/05;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/8247 |
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