发明名称 APPARATUS AND METHOD FOR SINGLE- OR DOUBLE- SUBSTRATE PROCESSING
摘要 <p>In a method for treating semiconductor substrates, one or two substrates are positioned in a substrate process chamber and subjected to wet etching, cleaning, rinsing and/or drying steps. During cleaning or rinsing a band of megasonic energy is created within the process chamber to create an active rinse or cleaning zone, and the substrate(s) are translated through the active zone during a rinsing or cleaning process within the chamber.</p>
申请公布号 WO2003050861(A1) 申请公布日期 2003.06.19
申请号 US2002039174 申请日期 2002.12.06
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