METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

摘要

PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) substrate is provided to be capable of preventing the generation of residuals by additionally carrying out a wet cleaning process using a cleaning solution containing nitric acid. CONSTITUTION: A gate line(22) and a gate wiring including a gate electrode(26) are formed on an insulating substrate(10). A gate insulating layer(30) is formed on the resultant structure. A semiconductor layer(40) is formed on the gate insulating layer of the gate electrode. A resistive contact layer is formed on the upper portion of the semiconductor layer. The first conductive layer(601) made of chrome and an upper layer(602) are sequentially formed on the resultant structure. A data line, a source electrode(65) and a data wiring including a drain electrode(66) are formed by etching the first conductive layer and the upper layer using an etchant mixed with Ce(NH4)2(NO3)6 of 8-12 %, NH3 of 4-12 %, and deionized water. Preferably, an additional wet cleaning process is carried out using an etchant containing nitric acid of 4-8 % and deionized water after forming the data wiring.