| 摘要 |
PURPOSE: A method for fabricating a laser diode is provided to prevent the oxidation of the second clad layer of P-type AlGaAs by growing the second clad layer of P-type AlGaAs on a space portion of a current blocking layer in a process for forming an I-shaped ridge. CONSTITUTION: A laser oscillation layer is grown by using a semiconductor substrate(11), an N-type GaAs buffer layer(12), an N-type AlGaAs clad layer(13), an N-type AlGaAs active layer(14), the first clad layer(15) of P-type AlGaAs, and an etch stop layer(16) of P-type InGaP. A current blocking layer(18) is grown on the laser oscillation layer. A dielectric mask(22) is deposited on both sides of an upper portion of the current blocking layer. An I-shaped ridge forming space is formed by performing a dry/wet etching process from a space portion at the center of the current blocking layer to an upper portion of the etch stop layer of the laser oscillation layer. The second clad layer(17) of P-type AlGaAs is grown on the I-shaped ridge forming space. A contact layer(19) of P-type GaAs is formed on an upper portion of the second clad layer of P-type AlGaAs. An upper end portion of the mask and the contact layer of P-type GaAs is etched by using chemical etchant. The contact layer of P-type GaAs is grown on the current blocking layer and the contact layer of P-type GaAs. A P-type electrode and an N-type electrode are formed on an upper portion of the contact layer and a lower portion of the semiconductor substrate.
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