发明名称 ITO SPUTTERING TARGET WITH FEW NODULES
摘要 An ITO (composite oxide mainly containing indium oxide and tin oxide: In<sb>2</sb>O<sb>3</sb>−SnO<sb>2</sb>) sputtering target produced by sintering a mixture powder such that the mixture content x of a tin oxide powder is 9.5 ≤ x ≤ 10.5(wt%) and the balance is a indium oxide powder. The target with few nodules is characterized in that the dissolution residue y (wtppm) of when the target is dissolved in aqua regia and the solution is filtered with a 0.2−µm filter is y ≤ e<sp>(2.03x−20.3)</sp>. In a sputtering process for forming a transparent electrode film while maintaining a good visible−light transmittance and a high conductivity, a sintered−body target with high density and with few nodules produced is efficiently manufactured while suppressing the degradation of the productivity and degradation of the quality due to produced nodules.
申请公布号 WO03050322(A1) 申请公布日期 2003.06.19
申请号 WO2002JP10272 申请日期 2002.10.02
申请人 NIKKO MATERIALS COMPANY, LIMITED 发明人 NAKASHIMA, KOICHI;KURIHARA, TOSHIYA;KUMAHARA, YOSHIKAZU;TATENO, SATORU
分类号 C04B35/457;C23C14/34;(IPC1-7):C23C14/34;C04B35/00;H01B13/00 主分类号 C04B35/457
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