Magnetoresistive Speicherzelle mit dynamischer Referenzschicht

摘要

The invention relates to a system for increasing the relative resistance difference of a magnetoresistive memory cell (17) that comprises one memory layer (1) and one reference layer (3) each on both sides of a tunnel barrier (2). Said reference layer (3) is configured as a soft-magnetic layer and the magnetization thereof which can be influenced by write processes is rectified by a reference support field or a reference magnetization flux (11).