METHOD FOR MANUFACTURING RESISTIVE STRUCTURE HAVING LOW TEMPERATURE COEFFICIENT OF RESISTANCE OF SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE: A method for manufacturing a resistive structure having low temperature coefficient of resistance of a semiconductor IC(Integrated Circuit) is provided to be capable of easily reducing TCR(Temperature Coefficient of Resistance) by using a TCR buffer layer. CONSTITUTION: A thin resistive film(5) is formed at the upper portion of a semiconductor substrate(9). A TCR buffer layer(6) is located between the thin resistive film(5) and the semiconductor substrate(9) for reducing TCR. Preferably, the TCR buffer layer(6) is made of Cr. Preferably, the TCR buffer layer(6) is formed by in-situ annealing processes. Preferably, an inductor device(3) and a capacitor device(1) are formed at both sides of the TCR buffer layer(6) at the upper portion of the semiconductor substrate(9).