METHOD FOR CONTROLLING ANGLE OF SILICON CARBIDE MESA SIDEWALL

摘要

PURPOSE: A method for controlling an angle of a silicon carbide mesa sidewall is provided to control the angle of the silicon carbide mesa sidewall by using one of quartz or alumina or anodized aluminum. CONSTITUTION: A lower electrode material of ICP-RIE(Inductive Coupled Plasma-Reactive Ion Etching) is formed by using one of quartz, alumina, and anodized aluminum(S100). An angle of a silicon carbide mesa sidewall is controlled according to each process variable by using the lower electrode material(S200). The process variables include bias power, oxygen fraction, an interval between an ICP coil and a sample, the lower electrode material, and reactive gas used for the etching process.