| 摘要 |
PURPOSE: A method of manufacturing a capacitor in a semiconductor device is provided to improve the characteristic of the capacitor by improving gap-fill and restraining etch by-product. CONSTITUTION: A pattern for a bottom electrode(60) is formed by etching an insulation layer(20,50) on a substrate(10). A ruthenium(Ru) bottom electrode is deposited on the pattern. An oxide layer(70) is deposited on the entire the Ru bottom electrode and the oxide layer is etched until the Ru bottom electrode is exposed. To expose the insulation layer, oxygen gas is used as a main etching gas. The oxide layer remaining on the pattern is removed.
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