MAGNETORESISTIVE RAM

摘要

PURPOSE: A magnetoresistive RAM(Random Access Memory) is provided to reduce a cell size of the magnetoresistive RAM and improve a sensing margin by simplifying a structure of the magnetoresistive RAM. CONSTITUTION: A P-N diode is formed by doping an N+ region(32) on a semiconductor substrate(31) and a P type impurity region(33) on a line of the N+ region. A barrier conductive layer(20) is stacked on an upper portion of the P type impurity region. A magnetoresistive RAM is composed by forming an MTJ(Magnetic Tunnel Junction)(15) between the barrier conductive layer and a word line(10). The magnetoresistive RAM memorizes plural data by controlling the current applied between the MTJ and the P-N diode according to the magnetizing direction of the MTJ.