发明名称 HILLOCK-FREE ALUMINUM LINE LAYER AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A hillock-free aluminum line layer and a manufacturing method thereof are provided to be capable of reducing fabrication cost, layer thickness or line width, and manufacturing time. CONSTITUTION: A hillock-free aluminum line layer is formed at the upper portion of a substrate(302). At this time, the hillock-free aluminum line layer is made of at least two pure aluminum layers. The first pure aluminum layer containing a plurality of the first aluminum crystal grains(304), is formed at the upper portion of the substrate. The second pure aluminum layer containing a plurality of the second aluminum crystal grains(306), is formed at the upper portion of the first pure aluminum layer. At this time, the second aluminum crystal grain is larger than the first aluminum crystal grain. At the time, the second aluminum crystal grain has a higher density than that of the first aluminum crystal grain.
申请公布号 KR20030046613(A) 申请公布日期 2003.06.18
申请号 KR20010076811 申请日期 2001.12.06
申请人 CHI MEI OPTOELECTRONICS CORPORATION 发明人 WANG CHENG CHI
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
代理机构 代理人
主权项
地址