| 摘要 |
PURPOSE: A method for forming a silicon thin film is provided, to form a silicon thin film with high orientation and high crystallinity by employing a seed layer having a lattice constant similar to that of silicon. CONSTITUTION: The method comprises the steps of forming an intermediate crystal layer(12) as a seed layer on a substrate(12), which is made of a material having a lattice constant similar to that of silicon; forming a silicon layer(14) on the intermediate crystal layer; and heating the silicon layer(14). Preferably the crystal layer(12) is made of CeO2, CaF2 or ZnS, and is evaporation deposited at a temperature of 500 deg.C or less. Preferably the substrate is made of glass, plastic, a metal or a metal alloy, and it comprises further a buffer layer on the surface. The silicon layer is formed at a temperature of 25-500 deg.C and is an amorphous layer.
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