REFRESH CONTROL CIRCUIT OF MEMORY DEVICE WITHOUT EXTERNAL REFRESH COMMAND AND METHOD FOR THE SAME

摘要

PURPOSE: A refresh control circuit of a memory device without an external refresh command and a method for the same are provided to intercept the operating current during power-up sequence by performing an internal refresh operation after the power-up sequence. CONSTITUTION: A refresh control circuit includes a control circuit(1) and a refresh pulse generation circuit(90). The control circuit is used for outputting a control signal of the second state during the first period in response to a power-up signal and the control signal of the first state in response to an initial input pulse after the first period. The refresh pulse generation circuit is used for outputting a pulse stream to refresh DRAM cells in response to the control signal of the first state. The control circuit includes the first node, the first circuit for pulling down the first node to an earth voltage level in response to the power-up signal, and the second circuit for pulling up the first node to a supply voltage level in response to the predetermined pulse.