SEMICONDUCTOR THIN FILM DEVICE, ITS MANUFACTURING METHOD, AND IMAGE DISPLAY DEVICE

摘要

PURPOSE: To control grain boundaries, particle diameters, and crystal orientations on an insulating substrate. CONSTITUTION: A semiconductor thin film device has a semiconductor thin film having a thickness of≤200 nm and formed on an insulating transparent substrate having a distortion spot of≤600°. The semiconductor thin film has an area where first semiconductor thin film areas having defect densities of <1x10¬17 cm¬-3 and second semiconductor thin film areas having defect densities of≧1x10¬17 cm¬-3 are alternately arranged in a stripe-like state. The first semiconductor thin film areas have widths broader than the second semiconductor thin film areas have. Consequently, a semiconductor thin film device having a high-quality semiconductor thin film can be obtained.