| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the surface resistance characteristic of a polysilicon gate electrode and the leakage current characteristic of a source/drain junction region by transforming an amorphous silicon layer into metal-silicide layer. CONSTITUTION: After sequentially forming a gate oxide layer(23) and a polysilicon gate electrode(24) on a silicon substrate(21), an LDD(Lightly Doped Drain) and halo ion implanting layer(25,26) are formed at both sides of the polysilicon gate electrode on the silicon substrate. After forming an insulating spacer layer(28) at both sidewalls of the polysilicon gate electrode, a source/drain junction region(29) is formed by implanting doped dopants. An amorphous silicon layer(200) is selectively formed on the upper portions of the polysilicon gate electrode and the source/drain junction region. After depositing a metal layer on the entire surface of the resultant structure, the amorphous silicon layer is transformed into a metal-silicide layer(200s) by using a two-step heat treatment and an etching process.
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