Method for defect and conductivity engineering of a conducting nanoscaled structure

摘要

The invention relates to a method for defect (36) and conductivity engineering of a conducting nanoscaled structure (22) or at least one part of it by generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure by directing a focused electron beam on the nanoscaled structure or an individual portion (36) of it to be engineered and/or by applying one or multiple wires of the conducting nanoscaled structure by applying a current density JD,I whereas the current density JD,I has a value below a critical current density JC which is the current per cross-section area of the wire at which the wire fails due to overheating and electromigration, and not lower than 3 orders of magnitude below JC. The invention further relates to the use of a secondary electron microscope having a filter for detecting back scattered electrons for such a method and a respective secondary electron microscope having such a filter for detecting back scattered electrons. <IMAGE>