| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the surface state of a thick high voltage gate oxide layer by forming a nitride based protecting layer between a thick oxide layer and a photoresist pattern. CONSTITUTION: A high and low voltage device region is defined by an isolation layer at a semiconductor substrate. A thick oxide layer(23) is formed on the semiconductor substrate(21) by the first gate oxidation. A protecting layer(200) is formed on the oxide layer. A photoresist pattern(24) for exposing the low voltage device region, is formed on the protecting layer. The protecting layer and oxide layer formed at the low voltage device region are sequentially removed by etching the resultant structure using the photoresist pattern as an etching mask. After removing the photoresist pattern, the remaining protecting layer is removed. A high and low voltage gate oxide layer(23a,25) are then formed by carrying out the second gate oxidation.
|
