METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREBY

摘要

PURPOSE: A method for forming patterns of a semiconductor device and a semiconductor device thereby are provided to prevent the critical dimension or a forming error of width of semi-dense patterns or isolated patterns by forming PPC dummy patterns on a side portion of the semi-dense patterns or the isolated patterns. CONSTITUTION: A plurality of main patterns(32,34,36) are formed on a semiconductor substrate. A plurality of PPC dummy patterns(38,40) are formed on a side portion of the main patterns in order to prevent a damage of the main patterns. The PPC dummy patterns and the main patterns are simultaneously formed by using a photo-lithography method. A gate electrode is formed by the main patterns. An interval between the PPC dummy patterns and the main patterns is less than 3 micrometers.