| 摘要 |
PURPOSE: To provide a semiconductor device and a method of manufacturing the same which can reduce adverse effect by formation of silicide on polysilicon and have advantage from the viewpoint of cost and microfabrication. CONSTITUTION: The area 12 where silicide is not yet formed is never overlapped with a PN-junction area of gate electrode forming layers 4a1, 4b1 by forming a PMOS forming area, and by covering polysilicon films 4a1, 4b1 with a fifth resist mask 10 so that the end part A of the resist mask 9 covering the polysilicon films 4a1, 4b1 is covered, when the arsenic ion (As¬+) having large mass is implanted. Accordingly, rise of resistance is prevented in the area 12 where silicide is not yet formed.
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