摘要 |
A process as shown in FIGS. 1A through 1I, or FIGS. 2A through 2I for providing first areas of gate oxide (30, 30A, 30B) on a substrate (10) having a first thickness and second adjacent areas (32, 32A, 32B) of gate oxide having a lesser thickness without the use of a N2 implantation process.
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