| 发明名称 |
Method of etching tungsten or tungsten nitride in semiconductor structures |
| 摘要 |
The present invention relates to a method of etching tungsten or tungsten nitride in semiconductor structures. We have discovered a method of etching tungsten or tungsten nitride which permits precise etch profile control while providing a rapid etch rate. In particular, the method employs the use of a plasma source gas where the chemically functional etchant species are generated from a combination of sulfur hexafluoride (SF6) and nitrogen (N2), where the sulfur hexafluoride and nitrogen are provided in a volumetric flow rate ratio within the range of about 1:2.5 to about 6:1.
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| 申请公布号 |
US6579806(B2) |
申请公布日期 |
2003.06.17 |
| 申请号 |
US20020140637 |
申请日期 |
2002.05.07 |
| 申请人 |
APPLIED MATERIALS INC. |
发明人 |
NALLAN PADMAPANI;OLUSEYI HAKEEM |
| 分类号 |
H01L21/28;C23F1/00;C23F4/00;H01L21/00;H01L21/302;H01L21/3065;H01L21/3205;H01L21/3213;H01L21/461;H01L23/52;H01L29/423;H01L29/49;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
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