发明名称 |
Process for producing a resistor in an integrated circuit and corresponding integrated static random access memory device having four transistors and two resistors |
摘要 |
An integrated static random access memory device includes four transistors and two resistors defining a memory cell. The four transistors are in a semiconductor substrate and are mutually interconnected by a local interconnect layer. The local interconnect layer is under a first metal level and a portion of the local interconnect layer defines above the substrate a base metal level. The two resistors extend in contact with a portion of the local interconnect layer between the base metal level and the first metal level.
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申请公布号 |
US6580130(B1) |
申请公布日期 |
2003.06.17 |
申请号 |
US19990460161 |
申请日期 |
1999.12.13 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
SCHOELLKOPF JEAN-PIERRE;GAYET PHILIPPE |
分类号 |
H01L21/02;H01L21/768;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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