发明名称 Pressure sensor having semiconductor sensor chip
摘要 A semiconductor sensor chip mounted on a thin diaphragm of a cylindrical metallic stem via an insulation layer is hermetically contained in a housing of a pressure sensor. The sensor chip includes a strain gage for outputting an electrical signal according to distortion of the diaphragm caused by pressure to be measured. A shield layer is interposed between the insulation layer and the sensor chip, and the shield layer is grounded. Influence of outside noises on the sensor outputs is eliminated or suppressed by the grounded shield layer even if the outside noises are in a high frequency region.
申请公布号 US6578426(B2) 申请公布日期 2003.06.17
申请号 US20010987349 申请日期 2001.11.14
申请人 DENSO CORPORATION 发明人 IMAI MASAHITO;SHINODA TAKESHI;SUZUKI YASUTOSHI;TANAKA HIROAKI
分类号 G01L9/00;G01L9/04;H01L29/84;(IPC1-7):G01L9/04 主分类号 G01L9/00
代理机构 代理人
主权项
地址