| 摘要 |
A semiconductor device fabrication method includes the steps of forming a first insulation layer and a first semiconductor layer sequentially on a semiconductor substrate having a buried diffusion region therein. A second insulation layer is formed on the first semiconductor layer. The first insulation layer, the first semiconductor layer, and the second insulation layer are then patterned to create openings that expose the buried diffusion region. A third insulation layer is formed on respective side walls of the openings on the exposed portions of the first semiconductor layer, first insulation layer and second insulation layer that form the openings. A first epitaxial layer is formed on the semiconductor substrate exposed through the openings. A second epitaxial layer is then formed on the first epitaxial layer to be connected to the first semiconductor layer, thereby forming an active base region and a second conductive type collector region in the second epitaxial layer of the first and second openings. A second semiconductor layer is then formed over the entire structure. Portions of the second semiconductor layer are oxidized using an oxidation mask, to form insulator portions. An emitter electrode, a base electrode and a collector electrode are formed on the portions of the second semiconductor layer that correspond to the emitter region, the base region and the collector region. The portions of the second semiconductor layer that are not oxidized form contact plugs that connect the first semiconductor layer and the electrodes.
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