Magnetostrictive sensor structure

摘要

A sensor for measuring magnetostriction of and/or magnetic thin film is constructed by depositing a thin film nonferromagnetic electrically insulating layer followed by a thin film layer of a sensor material which is piezoresistive and nonferromagnetic. The insulating and the piezoresistive film can be etched into an appropriate pattern and orientation to provide sensitivity to strain in the magnetic film. The magnetostrictive strain in the magnetic film is induced by a known magnetic field which produces a corresponding strain in the piezoresistive film which can be measured as a change in the electrical resistance which can be detected by external probes or other measuring means. The measurement of the magnetostriction can be performed as a part of the manufacturing process for wafers with a plurality of thin film magnetic heads thereon and does not require that the wafers be removed to a laboratory.