| 摘要 |
A semiconductor device is structured to include a wiring made of Al, a first insulation film made of silicon oxide including an organic content formed in contact with an upper surface of the wiring, and a second insulation film formed in contact with an upper surface of the first insulation film and made of an F-added SiO2 film having a higher Young's modulus than that of the first insulation film. The wiring has a film thickness dM of 400 nm, the first insulation film has a film thickness ds of 400 nm, and the second insulation film has a film thickness dh of 10 nm.
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