| 摘要 |
In a semiconductor laser device, a buffer layer, an n-contact layer, an n-light cladding layer, an n-light guide layer, an emission layer, a p-cap layer, a p-light guide layer and an n-current blocking layer having a striped opening are successively formed on a sapphire substrate, and a p-light cladding layer is formed in the opening. A p-contact layer is formed on the p-light cladding layer and on the n-current blocking layer. The n-current blocking layer is made of n-Al0.3Ga0.7N and has an electron concentration of 1x1017 cm-3 and an Al composition greater than 0.1, and the surface thereof is terminated with N.
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