发明名称 |
VDS protection for high voltage swing applications |
摘要 |
The invention provides apparatus, methods and systems for providing voltage protection at the drain-to-source path of an output transistor. The invention discloses circuit apparatus and system giving excess voltage protection in a circuit having a voltage swing up to approximately twice the voltage capacity of a circuit output transistor. Methods of the invention disclose maintaining the source-to-drain voltage of a protection transistor coupled to the circuit output transistor below its maximum value, while also maintaining the protection transistor gate-to-source voltage below its maximum value. The drain-to-source voltage of the circuit output transistor is guarded from exceeding its maximum acceptable drain-to-source voltage value by the protection transistor. Also disclosed are methods of selecting a protection transistor and related components such that the bias of the protection transistor is adjusted in response to the circuit output.
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申请公布号 |
US6580308(B1) |
申请公布日期 |
2003.06.17 |
申请号 |
US20020185366 |
申请日期 |
2002.06.27 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MARTINS MARCUS M. |
分类号 |
H03K17/0814;H03K17/10;(IPC1-7):H03K17/04 |
主分类号 |
H03K17/0814 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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