发明名称 VDS protection for high voltage swing applications
摘要 The invention provides apparatus, methods and systems for providing voltage protection at the drain-to-source path of an output transistor. The invention discloses circuit apparatus and system giving excess voltage protection in a circuit having a voltage swing up to approximately twice the voltage capacity of a circuit output transistor. Methods of the invention disclose maintaining the source-to-drain voltage of a protection transistor coupled to the circuit output transistor below its maximum value, while also maintaining the protection transistor gate-to-source voltage below its maximum value. The drain-to-source voltage of the circuit output transistor is guarded from exceeding its maximum acceptable drain-to-source voltage value by the protection transistor. Also disclosed are methods of selecting a protection transistor and related components such that the bias of the protection transistor is adjusted in response to the circuit output.
申请公布号 US6580308(B1) 申请公布日期 2003.06.17
申请号 US20020185366 申请日期 2002.06.27
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MARTINS MARCUS M.
分类号 H03K17/0814;H03K17/10;(IPC1-7):H03K17/04 主分类号 H03K17/0814
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