发明名称 |
Semiconductor wafer with crystal lattice defects, and process for producing this semiconductor wafer |
摘要 |
A semiconductor wafer has a front side 1, a back side 2, a top layer 3, a bottom layer 4, an upper inner layer 5 lying below the top layer 3, a lower inner layer 6 lying above the bottom layer 4, a central region 7 between the layers 5 and 6 an uneven distribution of crystal lattice defects. The concentration of the defects exhibits a first maximum (max1) in the central region 7 and a second maximum (max2) in the bottom layer 4.
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申请公布号 |
US6579589(B1) |
申请公布日期 |
2003.06.17 |
申请号 |
US20000575012 |
申请日期 |
2000.05.19 |
申请人 |
WACKERSILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG |
发明人 |
OBERMEIER GUENTHER;WAHLICH REINHOLD;BAUER THERESIA;BUCHNER ALFRED |
分类号 |
C30B29/06;H01L21/26;H01L21/322;(IPC1-7):C30B29/06 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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