发明名称 |
Method for growing a compound semiconductor, quantum well structure using the same, and compound semiconductor device including the same |
摘要 |
A method for growing a compound semiconductor includes a first formation step of forming a first group III-V compound layer; a second formation step of forming a second group III-V compound layer including nitrogen and at least one group V element other than nitrogen as a group V composition; and a third formation step of forming a third group III-V compound layer between the first group III-V compound layer and the second group III-V compound layer, the third group III-V compound layer being formed for controlling a reactivity of the second group III-V compound layer with a nitrogen source used in the second formation step.
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申请公布号 |
US6579780(B2) |
申请公布日期 |
2003.06.17 |
申请号 |
US20000746930 |
申请日期 |
2000.12.26 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TAKAHASHI KOJI |
分类号 |
C30B29/40;C30B25/02;H01L21/203;H01L21/205;H01L29/12;H01L33/06;H01L33/32;H01S5/343;(IPC1-7):H01L21/20 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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