发明名称 |
Removal of copper oxides from integrated interconnects |
摘要 |
An apparatus and a method for photoreducing copper oxide layers from semiconductor wafers during the processes of forming interconnects in advanced IC manufacturing. The apparatus comprises a reaction chamber with a high intensity UV light source and a wafer holder in the chamber. The UV light source is made of arrays of microdischarge devices fabricated on a semiconductor wafer where each of the microdischarge devices has the structure of a hollow cathode. Multiple arrays of microdischarge devices can be assembled together to make a planar UV lamp so as to provide a sufficient area for the UV illumination. The wafer holder in the chamber is made rotatable for a better uniformity during the photoreduction process. A non-oxidizing gas is flowed into the chamber to prevent instant and subsequent oxidation on the copper surface.
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申请公布号 |
US6579803(B2) |
申请公布日期 |
2003.06.17 |
申请号 |
US20010888845 |
申请日期 |
2001.06.25 |
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分类号 |
C23G5/00;H01L21/311;H01L21/768;H05K3/34;(IPC1-7):H01L21/302 |
主分类号 |
C23G5/00 |
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