发明名称 |
Method of reducing program disturbs in NAND type flash memory devices |
摘要 |
The present invention makes use of ion bombardment to amorphize the source and drain regions of a short channel FET prior to implanting. The source/drain implants are then localized to a shallow depth by appropriate choice of implanting conditions, typically employing rather low bombardment voltages of approximately 10 KeV. Amorphous source/drain regions substantially hinder the diffusion of source/drain dopants and thereby reduce the possibility of punchthrough and loss of FET function. Such devices are preferably used in NAND type flash memory devices maintaining proper self-boosting voltages and FET functions even when short channel lengths are employed.
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申请公布号 |
US6580639(B1) |
申请公布日期 |
2003.06.17 |
申请号 |
US19990372406 |
申请日期 |
1999.08.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HE YUE-SONG;CHANG KENT KUOHUA;HUANG ALLEN U. |
分类号 |
G11C16/04;H01L21/265;H01L21/336;H01L29/78;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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主权项 |
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地址 |
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