| 摘要 |
PROBLEM TO BE SOLVED: To solve problems in design of package electric characteristics for a semiconductor device having an RF signal system chip and a baseband signal system chip mixed together. SOLUTION: The semiconductor device has a first semiconductor chip 3f using a high-speed signal system chip, and a second semiconductor chip 3a using an RF analog signal semiconductor chip mixed together. Third metal thin wires 6t forming parallel metal thin wires are provided on only a lead frame forming RF signal lines, this enabling the tuning of electric characteristics and hence the tuning of the resonance intensity of the RF signal system. |
