| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a contact plug, which is capable of solving a problem in a SAC method. <P>SOLUTION: A semiconductor substrate having first and second gate conductive structure is provided, a liner layer is formed on the surface of the substrate, and the liner layer located between the first and the second gate conductive structure is removed to expose the surface of the substrate. A gap between the first and the second gate conductive structure is filled up with a first conductive layer, the first conductive layer is made flush with the liner layer, a flat inner dielectric material layer is formed on the surface of the substrate, a contact hole is formed to expose the surface of the first conductive layer, and the contact hole is filled with a second conductive layer for the formation of a contact plug. <P>COPYRIGHT: (C)2003,JPO |
