| 摘要 |
<P>PROBLEM TO BE SOLVED: To contrive miniaturization of a high-frequency power amplifier by miniaturizing semiconductor elements. <P>SOLUTION: This device has a semiconductor substrate and a transistor formed on the semiconductor substrate, and the main surface of the semiconductor substrate is provided with a control electrode terminal constituting the external electrode terminal of the transistor, and the first electrode terminal transmitting output signals. One or a plurality of control electrode terminals are provided, and a plurality of first electrode terminals are arranged on one side with one or a plurality of control electrode terminals in between. A plurality of first electrode terminals is arranged on the other side, and the first transistor portion comprises the portion including one or a plurality of control electrode terminals and a plurality of first electrode terminals on one side of the control electrode terminal. The second transistor portion comprises the portion including one or a plurality of control electrode terminals and a plurality of first electrode terminals on the other side of the control electrode terminal. The semiconductor element is square in shape. <P>COPYRIGHT: (C)2003,JPO |
