MULTI-BEAM DETECTOR, ELECTRON BEAM DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the size of a multi-beam detector used in an electron beam device or the like and to heighten the detecting efficiency.

SOLUTION: A plurality of detecting elements D1 to D8 of the detector are constructed by a p-type region formed by diffusing phosphorus in a Si layer of single crystal and an n-type layer provided in common to all of the detecting elements. A detected signal is output from terminals E1 to E8. In a housing of the detector, parts opposite to the surface of the detecting elements are formed of metal, and the metal part is provided with eight apertures A1 to A8 for passing secondary electrons opposite to the detecting elements D1 to D8. Monolithic constitution is adopted so as to reduce the size of the detector. High voltage is applied to the p-type and n-type regions of the detecting elements and the metal parts of the housing are grounded, whereby the apertures present convex lens action to pass electron beams with high efficiency so as to reduce crosstalk between multi-beams.

COPYRIGHT: (C)2003,JPO