| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in stability of the operation without enlarging the area of a cell. <P>SOLUTION: A first conductivity first well is formed in the area of one part of the surface layer for a semiconductor substrate. An MOS transistor is formed in the first well. The MOS transistor comprises a gate insulation film, a gate electrode as well as a first and second impurities diffusion areas at both sides of the gate electrode. A high leak current structure, in which a leak current density upon impressing a bias in the reverse direction of the first impurities diffusion area and the first well becomes larger than the leak current density upon impressing the bias of the same voltage in the reverse direction of the second impurities diffusion area and the first well, is formed. <P>COPYRIGHT: (C)2003,JPO |
