| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electrostatic chuck used for a semiconductor manufacturing device, which is superior in heat resistance, corrosion resistance, and plasma resistance. <P>SOLUTION: A metal electrode layer 2 is pinched between a top plate 1 of alumina material and a base plate 3, and the top plate 1 and the base plate 3 are bonded together for the formation of an electrostatic chuck used for a semiconductor manufacturing device. The top plate and the base plate are bonded together by the use of a bonding material 4 of yttrium oxide compound, the bonded laminate is thermally treated in a hydrogen atmosphere at 1700 to 1850°C for the formation of the electrostatic chuck. <P>COPYRIGHT: (C)2003,JPO</p> |
