发明名称 SUBSTRATE-TREATING APPARATUS AND SUBSTRATE-TREATING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate-treating apparatus and a substrate-treating method that can treat a hydrophobic wafer by using a fluid-mixing nozzle. SOLUTION: The substrate-treating apparatus comprises a treatment liquid supply means 66 for supplying treatment liquid, an inert gas supply means 67 for supplying an inert gas, and a fluid-mixing nozzle 65 for mixing the inert gas with the treatment liquid for discharging to a substrate, and treats the substrate by the treatment liquid. In this case, the inert gas supply means 67 has a liquid-mixing means 97b for mixing fluid IPA for reducing the surface tension of the treatment liquid with the inert gas. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003168668(A) 申请公布日期 2003.06.13
申请号 JP20010369627 申请日期 2001.12.04
申请人 TOKYO ELECTRON LTD 发明人 TANIYAMA HIROMI
分类号 G02F1/13;B08B3/02;C03C23/00;G02F1/1333;H01L21/00;H01L21/304;H01L21/306;H01L21/677;(IPC1-7):H01L21/304;G02F1/133 主分类号 G02F1/13
代理机构 代理人
主权项
地址