SINGLE TWIN SILICON BURIED ERASABLE AND PROGRAMMABLE ROM

摘要

PROBLEM TO BE SOLVED: To provide an erasable and programmable ROM capable of saving a layout space and capable of matching the manufacturing process of a CMOS.

SOLUTION: The programmable ROM comprises a first and second PMOSs connected in series and the first p-type metallic oxide film semiconductor is employed as a select transistor. The gate electrode of the select transistor is connected to a select gate voltage (VSG) and a first terminal (source) is connected to a source line voltage (VSL) while the second terminal (drain) is connected in series to the first terminal of a second p-type metallic oxide semiconductor (PMOS). The second terminal of the second p-type metallic oxide film semiconductor (PMOS) is connected to the bit line voltage (VBL) and the gate electrode of the second p-type metallic oxide film semiconductor (PMOS) is used as a floating gate.

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