| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-treating apparatus that can use microwave excitation and high-frequency bias excitation at the same time, and prevents abnormal discharge from being generated even if merely the high-frequency bias excitation is performed. SOLUTION: The plasma-treating apparatus comprises a vacuum chamber (2), a first plasma excitation source for generating plasma by introducing high- frequency power (M) into the vacuum chamber via an insulating transmission window (24), a placement table (30) that is provided in the vacuum chamber and retains an object to be subjected to plasma treatment, and a second plasma excitation source (80) for generating plasma by applying a high-frequency bias to the placement table. In the plasma-treating apparatus, conductive members (20A to 20E) each in which the same potential as that of the vacuum chamber is given are provided at least at one portion on the inner wall surface of the vacuum chamber. COPYRIGHT: (C)2003,JPO
|
