| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing epitaxial wafer by which both the occurrence auto-doping and the generation of nodules can be prevented effectively. SOLUTION: A protective film 30 is formed on the whole surface of a silicon wafer 10 excluding the front-side main surface 11 of the wafer 10. The edge sections of the wafer 10 are chamfered from both the surface and rear sides to have chamfered tapered surfaces of≥20°in angle. Then an epitaxial film 20 is formed on the main surface 11. The thickness of the protective film 30 is adjusted so that the film 30 has a thickness of≥5,000Åon the rear-side main surface 12 of the wafer 10. Consequently, the generation of nodules can be prevented although the epitaxial growth is performed in a state where the protective film 30 is formed on the chamfered tapered surfaces 13 and 14 and outer peripheral surface 15 of the wafer 10. COPYRIGHT: (C)2003,JPO
|
