| 摘要 |
PROBLEM TO BE SOLVED: To reduce the power consumption of DT-MOSFET and to improve its speed by preventing shorting among a source region, a drain region, and a gate electrode by a silicide layer. SOLUTION: A manufacturing method is provided with: a process for forming the gate electrode 19 on a semiconductor layer 13 where the extending part 52 of a channel forming region connected to a channel forming region 51 is formed, and forming a gate electrode connection part 20 which is directly connected to the extending part 20 of the channel forming region; a process for forming the source and drain regions 22 and 23; and a process for forming the silicide layer 26 on the surfaces of the source/drain regions 22 and 23. A trench element separation region 16 is formed on the semiconductor layer 13 so that the source/drain regions 22 and 23, the channel forming region 51, and the extending part 52 of the channel forming region are separated on a surface side along the boundary of the gate electrode 19 and the gate electrode connection part 20, before the silicide layer 26 is formed. COPYRIGHT: (C)2003,JPO
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