发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND POWER SOURCE SUPPLY METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit in which influence of noise in high voltage is little, dispersion of voltage in low voltage is eliminated, and current consumption at standby is little, and a power source supply method. SOLUTION: A Vdet signal becomes a signal 'H' of a high level when external power source voltage is high. Hence, when external power source voltage is high, a nMOS 75 is turned on and a pMOS 74 is turned off, thereby, a power source of a nMOS regulator generating power source 72 is supplied to an internal circuits 73. Also, when external power source voltage is low, a nMOS 75 is turned off and a pMOS 74 is turned on, thereby, a power source of a pMOS regulator generating power source 71 is supplied to the internal circuits 73. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003168291(A) 申请公布日期 2003.06.13
申请号 JP20010364684 申请日期 2001.11.29
申请人 FUJITSU LTD 发明人 MORI KATSUHIRO;FUJIOKA SHINYA
分类号 G11C11/407;G05F3/24;H01L21/82;H01L21/822;H01L27/04;H03K19/00;(IPC1-7):G11C11/407 主分类号 G11C11/407
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