| 摘要 |
PROBLEM TO BE SOLVED: To provide an isolation structure between word lines, which permits the lines to be arranged close. SOLUTION: The semiconductor device is provided with a plurality of memory transistors arranged in lines and a plurality of word lines WL1, WL2,..., being gate electrodes of the memory transistors in the same line and long in the direction of the lines and repeated in the direction of a row, while two word lines, neighbored in the direction of the row among the plurality of word lines, are separated by a dielectric film GD2 interposed so that the size in the separating direction of them becomes the thickness of the film. The dielectric film GD2 is constituted of a plurality of dielectric films BTM, CHS, TOP, for example, and is a charge accumulation film having charge retaining ability. COPYRIGHT: (C)2003,JPO
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